Oct 14, 2008 // EON ─EN29LV640T/B Flash memory
EON ─EN29LV640T/B Flash memory
 
Company Profile
Eon Silicon Solution Inc. is a professional IC design company, with the main product line consisting of NOR flash memory products from 512K to 512M, as well as SPI Flash memory products from 512K to 64M. With our outstanding research capability, long term and stable work relationship with the international heavyweight Multi-Project Wafer, we have the technology to manufacture and focus on the limited commercial production of 0.18 and 0.13um. We are currently conducting development on 90nm manufacturing technology, and will be continuously expanding the wide range of our product line and to make it even more applicable. The quality and specification of our products reaches the same standard as the international heavyweight manufacturers. We are currently expanding our operation team R&D, AE, PE, TE, production, marketing, etc., with top professionals. We are look forward to achieving spectacular success and sharing the benefits with our shareholders and employees. Also, using  the brand image of “Eon” to build a sustainable development is another of our future prospects.
 
Milestone
1996 Q1: Incorporated in California
2002 Q4: Headquarter moved to Taiwan
2003 Q1: 0.23um Flash Production in UMC
2004 Q3: 0.23um Flash Production in SMIC
2004 Q4: 0.18um Flash Production in DBH
2006 Q1: 1.8V Product Production in March ‘06
2006 Q2: 0.18um Flash Production in SMIC
2006 Q2: 3V SPI Product Production
2007 Q1: 0.13um Flash Production in DBH
2007 Q4: MCP device ready for mobile phone
GENERAL DESCRIPTION
The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8μs. The EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.